CMOS 高耐圧テクノロジ
富士通ウェーハ ファウンドリ サービスでは各種ドライバ（LCD、有機ELなど）向けに、CMOS高耐圧テクノロジをご用意しています。以下に、CMOS高耐圧テクノロジの主要特性を示します。
| Technology | 0.18 um | 0.25 um | 0.35 um | 0.65 um |
|---|---|---|---|---|
| The "Capacitor" and "Resistor" items are options. | ||||
| *: One time Programmable(OTP) memory option. | ||||
| Wafer Size | 8inch | 8inch | 8inch | 6inch |
| Logic Voltage (V) | 1.8/(3.3or5.0) | 2.5 | 3.3 | 5.0 |
| High-voltage (V) | 12V 18V 25V 32V |
12V 18V 25V 32V |
12V 18V 25V 32V |
32V |
| Available Poly/Metal Layers |
2P6M | 2P5M | 1P4M | 1P2M |
| Capacitor | Poly-Poly/Metal-Metal | Poly-Poly | Bulk-Poly | Bulk-Poly |
| Resistor | Diffusion /Poly resistor |
Diffusion /Poly resistor |
Diffusion | Diffusion |
| Well | Triple Well | Twin Well | Twin Well | Twin Well |
| OTP* | Yes | No | No | No |
| Document Available | Now (18V) Sep 07 (12/25V) Dec 07 (32V) |
Now | Now | Now |
| Data Acceptable | Now (18V) Oct 07 (12V) Nov 07 (25V) Jan 08 (32V) |
Now | Now | Now |