Tokyo, December 19, 2008 – Sumitomo Electric Industries, Ltd. and Fujitsu Limited have reached an agreement on the transfer of Fujitsu’s shares of Eudyna Devices Inc., a 50-50 joint venture between the companies, to Sumitomo Electric.

Kawasaki and Tokyo, Japan, December 17, 2008 – Fujitsu Laboratories Limited and Fujitsu Microelectronics Limited today announced the development of a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless devices. As a world's first, Fujitsu developed a 45 nanometer (45nm)-generation CMOS-based transistor capable of handling 10V power output, thus enabling the transistor to handle high-output requirements necessary for power amplifiers used in WiMAX and other high-frequency applications. The new technology makes it possible for power amplifiers to be formed on the same die as CMOS-logic control circuitry to achieve single-chip integration, thereby making high-performance, low-cost power amplifiers feasible.

Kawasaki, Japan, December 16, 2008 – Fujitsu Laboratories Limited announced today the development of power-saving CMOS technology for logic LSI chips for 32 nanometer- (32nm-) generation and beyond. The new technology enables employment of a specific silicon crystal surface, which previously had not been applied in silicon substrates due to the crystal surface's conventionally low performance in the past, by improving its performance. As a result, as a world's first, the technology makes it possible to use current 45nm-generation fabrication facilities to reduce LSI power voltage without lowering operation speed, thereby containing production costs and cutting LSI power consumption during operation by approximately 20 percent (20%). It is anticipated that the technology can be used in a wide range of applications, such as system LSIs for various mobile devices that will need to be increasingly multi-functional, and for microprocessors of which many are running with multiple processing cores.

Tokyo, August 4, 2008 – As a result of the earthquake that struck the northern Iwate region of Japan after midnight on July 24, 2008, a portion of the semiconductor manufacturing equipment at Fujitsu Microelectronics' Iwate Plant was damaged.