Test Equipment
We combine various test method in the verification of the device reliability, the defect mechanism or in the failure analysis. Below tables are list of equipment (method) that we actually use.
If your inquiry requires equipment other than listed above, we can respond to your inquiry by utilizing out-source laboratories.
Measurement / Microsection technique (Reliability & Failure analysis)
| Inspection | System | Objective |
|---|---|---|
| Visual inspection | Digital microscope | Visual inspection, and observation of IC chip (150 to 3,000 magnifications) |
| Fiber scope | Inner visual inspection of mechanical part | |
| Microscope | Outer visual inspection | |
| Metallurgical microscope | Surface observation of IC chip (50 to 1,500 magnifications) |
|
| Stereoscope | Visual inspection (up to 120 magnifications) | |
| Dimension measure | Measuring outer dimension (projector included) | |
| Analytical balance | Measure IC moisture adsorption etc. | |
| Electric measuring | ROM evaluation system | For ROM Characteristics |
| Impedance analyzer | For passive device | |
| Oscilloscope | Measuring when using jig | |
| Curve tracer | For V-I characteristics | |
| Digital multi meter | Measuring when using jig | |
| Semiconducter Parameter analyzer | For variety of characteristics (small-scale IC tester) | |
| Pulse generator | Measuring when using jig | |
| Function generator | Measuring when using jig | |
| Milliohm meter | For PCB, Cable | |
| Logic analyzer | For confirmation of phenomenon in system | |
| Brightness measure | Brightness, Color tone | |
| Automatic precision measure | For PCB | |
| Insulation tester | For PCB, cable | |
| Leakage current tester | For Discrete Semiconductor | |
| Life Test |
ESD tester | ESD robustness evaluation |
| LSI D-Burn-in chamber | Burn-in test for deterioration under dynamic conditions | |
| LSI S-Burn-in chamber | Burn-in test in forced-air-cooling, for highly exothermic LSI | |
| Ion migration evaluation system | Degradation evaluation through continuous monitoring for ion migration | |
| Connector intermittent discontinuity evaluation system | Connecting component evaluation for intermittent discontinuity | |
| Data acquisition | Degradation evaluation through continuous monitoring | |
| Pressure cooker | Evaluation for degradation caused by high pressure and humidity conditions | |
| Centrifugal acceleration tester | Degradation evaluation through centrifugally accelerated | |
| Mechanical shock test chamber | Evaluation for degradation due to mechanical shock | |
| Withstand voltage tester | Evaluate withstand voltage | |
| Resistance monitor | Evaluation for degradation through continuous monitoring | |
| Weighing apparatus for light weight | Measure the goods with minute weight | |
| Non distractive test | X-ray microscope | Investigation for short circuit in inner trace, inner crack. |
| Infrared thermometer | Measure component temperature | |
| Scanning Acoustic Microscope | Investigation for inner crack | |
| X-ray fluorescence analyzer | Contained element analysis | |
| Semi-distractive test | Infra-scope | Identify the heat radiating point within IC |
| Emission microscope | Identify point where hot electron is generated within IC | |
| Draft chamber, etc | De-capsulation equipment for plastic IC (Including chemicals, beaker, etc) | |
| Plastic opener | De-capsulation equipment for plastic IC | |
| Manual probe-pointer | Measuring tool for IC-internal circuit (Instrument with Probe manually adjustable) |
|
| Liquid crystal thermography | Identify the point where heat is radiated within IC | |
| Destructive test | Plasma reactor | Remove surface layer of IC chip |
| Polisher | Microsection of IC |
Non destructive test:Specimen is tested as-is, without processing.
Semi destructive test: Specimen is tested after processed. Processed specimen is kept functional.
Destructive test:Specimen is tested after processed. Processed specimen is not functional.
Measurement / Microsection technique (material analysis)
| Analysis | System description | Manufacturer | Model | Performance, Application |
|---|---|---|---|---|
| Morphology | Micro watcher | Mitsubishi Kasei | VS-20F | Image pickup device:2/3" CCD, 410 thousand pixel, Non destructive morphology observation on surface under 25 to 1,000 magnifications |
| Metaloscope(OM) | Nikon Olympus |
Eclipse ME600 PMG3, etc |
Max magnifications;1,000-2,000 Multiple interaction meter, Morphology observation |
|
| SEM | JEOL | JSM-5400LV | Resolution 3.5nm, Observation/fracture surface analysis are realized without evaporation |
|
| FE-SEM | JEOL | JSM-6320F | Resolution: 1.2nm(15kV), 2.5nm(1kV), specimen up to 26mm(diameter)×10mm H, High resolution: Up to 650 K pixel |
|
| TEM | JEOL | JEM-4000EX | 400kV, Max magnification: 3Mln (depend on the enlargement of photo) Lattice image observation, Electron diffraction, Observation on Flat surface/ cross section structure of Nanometer scaled element |
|
| AFM/SPM | DI | NanoScope 3aD3000 stage |
Height up to 5µm, Height Resolution:Sub nanometer level, Large-scaled sample stage: (300nm), Microscopic measurement on surface configuration |
|
| FIB processing | FIB-SIM | Seiko | SMI9200 | Surface processing/Observation, Crystal grain observation, Create cross section for analysis with SEM/SAM, Create specimen for TEM, processing on Trace |
| Micro Analysis | EPMA | JEOL | JXA-8800RL | Element analysis in solid substance of more than 1um. (1wt% order), Be-U analysis, Element color map |
| SEM-WDX/EDX FE-SEM-EDX |
Hitachi | S-650 | Resolution 600nm(25kv), C-U analysis with WDX, EDX appliance, Morphology observation/Qualitative analysis under 200K-300K magnifications |
|
| Hitachi | S-4500 | Resolution 1.50nm(15kv)/4.0nm(1kV), C-U analysis with EDX appliance, High resolution (with Max of 500K ×) for Morphology observation and Quantitative / Qualitative analysis |
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| Surface analysis | SAM | ULVAC-PHI | Model 680 | Min probe 10nm, Li-U analysis, High precision element mapping, Element analysis in surface layer and depth profile (1at% order), Low speed ion irradiation |
| XPS | SSI | S-Probe | Min probe: 100×250µm, Monochrome AI & Non-monochrome Mg X-ray, Qualitative analysis of element in surface layer(up to 0.1at% order), Chemical bonding analysis |
|
| µ-XPS |
ULVAC-PHI | Quantera SXM | Min probe: 9µm, Li-U analysis, Monochrome AI scan type X-ray, Ar/C60 ion gun, Element/ Chemical bonding analysis in surface layer/depth profile, State analysis mapping |
|
| Element analysis | ICP Mass Spectrometry (ICP-MS) |
Agilent | 7500a | Quantitative/ Qualitative analysis of minute amount element High sensitivity, Robustness and reliability against Matrix, (ppt to hundreds ppm order ) |
| ICP-AES | Seiko | SPS1700HVR | Sequential wave length range: 160-800nm , Multi element simultaneous high-sensitivity Quantitative / Qualitative analysis (ppb-ppm order) |
|
| Fluorescence x-ray analyzer | Rigaku | RIX3000 | 10-35mmφ, Element Analysis (ppm order), C-U analysis |
|
| Chemical Analysis | Ion Chromatograph analyzer (IC) |
Japan dionex | DX-500 series, (CD-20, IP-25, LC-30) |
Suppressor type, Electric conductivity detectable range:0.01-3000µs, Isocratic pomp, Temp. range: Ambient to 80 degC, 35 degC normally, Quantitative / Qualitative analysis of Anion / Cation (several 10 ppb-ppm) |
| Yokogawa analytical | IC7000 | Suppressor type, Electric conductivity detection type: 0-5ms/cm, Temp. range: Ambient to 80 degC, 40 degC normally, Quantitative / Qualitative analysis of Anion/Cation (several 10 ppb-ppm), Cyanogen analysis |
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| Capillary electrophoresis system | Otsuka electronics | CAPI-3200 | Photo diode allay detector with 512ch, Wave length range: 190-600nm, Quantitative / Qualitative analysis of Anion, Cation in Plating solvent, cleaning solvent (-ppm) |
|
| Organic analysis | FT-IR | Shimazu | FT-IR8400S AIM-8800 |
Resolution 0.5cm-1, Wave length range;7800-400cm-1, >25um φ area, Microscope/ATR/Reflection functions, Structure analysis of organic material |
| JASCO | FT/IR-350 | Resolution 0.5cm-¹, Wave length range: 7000-400cm-¹, Microscope/ATR/Reflection/ polarization functions, Structure analysis of organic material |
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| GC-MS | Shimazu | QP5050A | Concentrated injection-type system: CP4020, High-frequency induction furnace pyrolyzer JHP-3, Structure analysis of solvent and gas, Organic materials |
|
| Silicon Wafer Analyzer | Shimazu GL science |
QP5000,5050A SWA256 |
Gas analyzer for; thermally generated gas from wafer, impurities in ambient air, Structure analysis (Qualitative) and Quantitative analysis |
|
| GS | Shimazu | GC-17A | Detector FID/TCD/FPD, Auto sampler, Quantitative/ Qualitative analysis for solvent, gas |
|
| Material test | Thermal analysis system EXSTAR6000 |
Seiko | DSC6200 | Temp:-150 to 1000degC, Speed:0.01 to 100degC/min, Sensitivity: +/-100mW, Measuring subject: Melting /glass transition/ Thermal history/ Crystallization/ Metallization/ specific heat |
| TG/DTA6300, etc | Temp.: Room temp. to 1500degC, Speed: 0.01 to 100degC/min, TG sensitivity: +/-0.2µg, DTA sensitivity: 0.06uV, Measuring subject: Moisture, Ash content/ Decomposition/ Oxidation/ Heat resistance/ Filler content |
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| TMA/SS6100, etc | Temp:-150 to 1500degC, Speed:0.01 to 100degC/min, Sensitivity: +/-0.02µm, Measuring subject: Expansion coefficient/Glass transition/ softening/swelling /creep/ stress/ deformation of solid substance or film product |
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| Digital dust indicator | Shibata science technology | P-5 | Stearic acid conversion factor: 0.001mg/m³, Measure density of floating dust in air |
|
| Trace moisture measuring system | Mitsubishi chemical | CA-100 | Range: 10µg to 100mg of H2O, Moisture content in liquid specimen |
|
| Hydrogen ion concentration meter | Horiba | F-23 | Range; pH 0 to 14, Resolution: 0.01pH, Hydrogen ion concentration in liquid substance, Alkaline/ Acid test |
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| Vickers hardness test | Akashi | MVK | HMV, Load: 30 to 2000g, Hardness test for Metal, plastics |
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| Tension tester | Shimazu | AG-50KND | Tension/ Compression test (tension-compression cycling is also available) |
|
| SD-500 | Range: 0 to 500kg, Head speed: 0.5 to 500mm/min, Tension/compression strength test for component material and papers, etc |
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| Electronic balance | sartorius | R160D | Range: 0 to 162g, Sensitivity: 0.01mg, Basis weight of specimen |
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| Conductivity meter | Yokogawa analytical | SC82 | Range: 0 to 200ms/cm, Water purity analysis |
Environmental test (Reliability analysis)
| Analysis | System description |
Test objective |
|---|---|---|
| Environmental test | Thermal shock chamber | See the product reliability after application of rapid thermal change |
| Thermostatic chamber | See the product reliability after the application of thermal / humidity stress. | |
| Vacuum oven | See the product reliability under low pressure condition. | |
| Thermal shock chamber (Dew condensation) | See the product reliability under rapid temperature change accompanying the dew condensation | |
| Corrosive Gas test chamber | See the product reliability after the exposure to the corrosive gas. | |
| Vibration tester | See the product reliability / robustness against the vibration. | |
| Air reflow chamber | See the product reliability after the reflow stress | |
| Thermal cycle test chamber |