IC Course
Following tables explain you which analysis technology is available as IC-related material analysis.
| Raw material acceptability | |||
|---|---|---|---|
| Raw Material | Analyze for | Objective | Equipment |
| Silicon board GaAs board |
Description and amount of impurity element | Specification establishment, Lot control | ICP-AES |
| surface profile | AFM | ||
| Thickness/state of native oxide film | XPS | ||
| Constituent of surface contamination | Control on Storage condition | ||
| Resist | Molecular configuration analysis | Specification establishment, Lot control | FT-IR |
| Description and amount of impurity element | ICP-AES | ||
| Raw Gas | GC-MS,ICP-AES | ||
| Spatter Target, Metal for evaporation |
ICP-AES | ||
| Location dependency of Segregation | EPMA | ||
| Adhesive | Description of chief constituent | FT-IR, Heat decomposing GC-MS, FT-IR |
|
| Molecular configuration | FT-IR | ||
| Thermally generated Gas from hardened material | Influence on ambient environment | GC-MS | |
| Ion contained in Hardened material | Evaluation on Corrosion behavior | IC | |
| Heat resistance of hardened material | Selection of acceptable material | TG-DTA | |
| Process acceptability, conditioning | ||||
|---|---|---|---|---|
| Process | Location | Analyze for | Objective | Equipment |
| Lithography, Etching |
Pattern | Shape, condition of residual film | Investigation into application-dependent deviation | FE-SEM, TEM |
| Optimization of exposure/development conditions | ||||
| Optimization of resist amount | ||||
| Optimization of Etching duration | ||||
| Identification of residual film | Root cause analysis for residual film | FT-IR,XPS | ||
| Identification of foreign material | Root cause analysis for foreign material contamination | EPMA,SAM | ||
| PCB Whole area | Surface shape | Optimization of conditions | AFM,FE-SEM | |
| Localized area in PCB | Surface roughness value | Verification of location dependent deviation | AFM | |
| Cleaning | PCB Whole area | Stain, Discoloration | Optimization of Type/Amount/flow rate of chemical | XPS |
| Foreign material | EPMA | |||
| Microscopic foreign material | Root cause analysis for foreign material contamination | SAM | ||
| Ion implantation | n-MOS | Distribution of impurity element | Root cause analysis for abnormal characteristics | SIMS |
| Depth profile of Ion implantation(P, As) | Optimization of iImplantation depth, distribution | |||
| p-MOS | Depth profile of Ion implantation (B) | |||
| Ion-implanted area | Shift in implanted Ion distribution | Optimization of Implantation/ Anneal conditions |
||
| Depth/significance of damage | TEM | |||
| Silicide formation | Silicide area | Configuration of Surface Chemical bond | Root cause analysis for resistance defect | XPS |
| Depth profile | SAM | |||
| Film property | Optimization of Gas flow rate | XPS | ||
| Configuration | Optimization of process conditions | TEM | ||
| Thermal treatment | Cu trace | State of Oxidation | XPS | |
| Crystal grain | TEM | |||
| Organic contamination | Optimization of system, Root cause analysis for defect |
SAM | ||
| Thin film formation | Gate area, Gate film | Cross section configuration, Film thickness | Optimization of conditions | TEM |
| Condition of interface between film and PCB | ||||
| Film thickness | SAM | |||
| Electrode film | Film thickness, Crystal grain region |
FIB-SIM, TEM |
||
| Description/Amount of impurity element | Lot control | ICP-AES | ||
| Surface of Insulation film Electrode film |
Change in surface conditions associated with processing | Specifying Process conditions, Identifying factor requiring improvement |
XPS | |
| Surface of trace pattern | Constituent of contamination | Root cause analysis for foreign material contamination | SAM | |
| Cupper trace | Grain diameter | Specifying Process conditions | TEM | |
| Cross section of Electrode/Dielectric surface |
Foreign material, Abnormal area | Root cause analysis for foreign material/abnormality | FIB,SAM | |
| Failure analysis on Device structure | ||||
|---|---|---|---|---|
| Device | Location | Analyze for | Objective | Equipment |
| LSI | Base structure | Cross section configuration | Evaluation on purchased article | FIB-SIM, FE-SEM |
| Solder bump | Constitution | Root cause analysis for separation | EPMA | |
| Electrode, Trace surface |
By-product of corrosion | Influence evaluation of process environment | XPS,SAM | |
| Pad cross section | Crack shape, Foreign material constitution |
Root cause analysis for crack | SAM | |
| Trace | Cut/create specific trace | Modification in trace | FIB | |
| FET | Base structure | Cross section configuration / Film thickness | Evaluation on purchased article, Lot control |
FIB-SIM, FE-SEM |
| Constituent element of each layer | Evaluation on purchased article | FIB,SAM | ||
| Coverage of surface protection film | Evaluation of moisture resistance | FIB-SIM | ||