TEM
Transmission Electron Microscope
Transmission Electron Microscope (TEM) is a system that provides microscopic configuration of specimen, by irradiating electron
beam on thin-processed specimen to form an image of direct or diffracted electron beam.
The image formed only by direct beam is called "Bright field image" while that by diffracted beam is called "Dark field
image". The former reflects the crystal orientation or crystal character. In the latter, only crystals that satisfy specific
diffraction conditions will be brightly viewed so that polycrystal and crystal defects can be analyzed. Further, by applying
direct and diffracted beams together, system captures crystal lattice image.
What can TEM do...?
- EDX
Through observing Electron beam diffraction pattern, crystal structure can be analyzed and substance can be identified.
- Surface profile
The fine electron beam scans over the specimen surface to see the spectrums of the elements, individually.
- Quantitative analysis
Irradiate the electron beam on one spot for several 10 sec, to analyze the power of the X-ray emitted. The composition (ratio) of the elements will be shown.
Equipment we use
FEI TecnaiF20
Example
TEM image --- Carbon Nano tube
Carbon Nano Tube (CNT) is one of the most attracting material for the wiring , LSI, etc. The layer composition of the CNT can be effectively analyzed by TEM. The picture below is the multi wall nano tube (MWNT).
Click the picture for the higher resolution.
TEM-EDX -----Microsection of the Magnetic disk head
The image clearly shows the TMR film ( the tonnel composition that present the magnetic resistance).
From the bottom: NiFe/Ta/NiCr/PtMn/CoFe/Ru/CoFe/MgO/CoFe/Ru/Ta/Ru/Ta/NiFe
Distribution of each element is clearly analyzed
Cross section of the head (read area is near TMR film)
TEM image ---- Cu via cross section
TEM on Cross section – Cu via with diameter of 0.5µm in LSI
CVD-Tin (Chemical Vapor Deposition titanium nitride) barrier film of 10nm can be observed; evenly formed all over the via wall in side and bottom.
TEM image - Ta2O5 MOS configuration
Given [110] incident, crystal lattice shown in Si substrate has {111} faces and the stripe spacing of 0.31nm.
Therefore precise thickness of SiO2 layer and Ta2O5 layer can be measured
Analysis of the metal thin film
To know more about our skill using TEM technology, visit the "advantage" page!