AES, SAM
Auger Electron Spectroscopy
In scanning Auger Microprobe system solid-state specimen is bombarded with finely focused electron beam to eventually obtain Auger electrons. Auger electrons from only the outermost few atomic layers are emitted from the specimen without energy loss, and contribute to the AES (Auger Electron Spectroscopy) peaks in a spectrum (except for H,He).
With AES technology, lateral distributions of elements at the surface, so-called Auger maps can be obtained. Also, the combination
of two technologies; AES measurements and sputter etching, allows as to obtain depth profile.
AES is the technology that greatly contributes to problem solution - problems such as corrosion, discoloration, junction,
thin layer or foreign material in metal or IC.
Equipment
PHI Model 680
(Scanning Auger Nanoprobe System)
Example
Element Analysis of Abnormal area in Metal Surface
Secondary electron image at low magnifications
Secondary electron image at high magnification
Qualitative analysis result of abnormal/normal area in metal surface.
Cl and N are detected in abnormal area, hence these contaminant foreign element mixed and adhered in other process.
Element distribution - Contaminated trace surface
Secondary electron image of trace pattern and distribution of Carbon.
Trace pattern surface is contaminated with organic substance mainly consists of carbon
Depth direction analysis on Solder bump surface
Secondary electron image of normal bump
Secondary electron image of dented bump
Sputter depth profiles of solder bump surfaces
Ther dented bump was proved to have thicker oxide film on the surface, than the normal bump has .
Line profile and Auger map on cross section of solder bump
Line profile on the cross section
Auger map on the cross section
In the interface between Ni and solder, layer of Ni-Sn alloy and segregating P are observed.
Analysis of interface processed with Micro capsule type anisotropic conductive adhesive
