FUJITSU QUALITY LABORATORY

FIB

(Focused Ion Beam system)

Focused Ion Beam System (FIB) is a system that realizes precise cross section processing with excellent location accuracy, by observing subject area with a Scanning ion microscopy image; an image of detected secondary electron or secondary ion which are generated through focusing accelerated Ga ion beam via Electro static lens and scanning specimen surface. In combination with high resolutionTEM or FE-SEM, desired information can be rapidly acquired.

Equipment

FIB system

SMI9200
(Seiko Instrument)

Exampl

Cross section of electrode pad

SIM image on Cross section area

(Left) Whole image of FIB processed area
(Right) Magnified image of pad cross section (Angle at 60 degree)


Cross section of Non-volatile memory

SIM image on Cross section area

By FIB processing, target area in memory cell can be exactly cross sectioned.


Cross section of Multi layer film and Solder

SIM image on cross section area

SIM (Scanning ion microscope) image provides clear image of multi layer film composed of metal substances with close atomic number; which is difficult to capture the difference (e.g. between Nickel and cupper) by means of SEM (Secondary Electron Microscope)