Focused Ion Beam System (FIB) is a system that realizes precise cross section processing with excellent location accuracy, by observing subject area with a Scanning ion microscopy image; an image of detected secondary electron or secondary ion which are generated through focusing accelerated Ga ion beam via Electro static lens and scanning specimen surface. In combination with high resolutionTEM or FE-SEM, desired information can be rapidly acquired.

SMI9200
(Seiko Instrument)

(Left) Whole image of FIB processed area
(Right) Magnified image of pad cross section (Angle at 60 degree)

By FIB processing, target area in memory cell can be exactly cross sectioned.

SIM (Scanning ion microscope) image provides clear image of multi layer film composed of metal substances with close atomic number; which is difficult to capture the difference (e.g. between Nickel and cupper) by means of SEM (Secondary Electron Microscope)