Device with metallic thin film technology
MRAM - TEM
MRAM (Magnetoresistive Random Access Memory) is the promising memory technology for the next generation, due to its rapid turnaround and nonvolatile attribute. MRAM has been focused in the industry and increasing numbers of the device is now commercially available.
The region to store the information has the laminated structure, which is composed of the films of several-nm-thin. TEM (Transmission Electron Microscope) -EDX (Energy Dispersive X-ray spectroscopy) can effectively analyze this structure.
FQL experts is capable of analysis on the metallic thin film, for its material, thickness and so on.
TEM image - High resolution
Specimen can be analyzed at the high magnification level - to the level that the stripe pattern of the atom can be seen. The thickness of each layer of the film can be measured.
(Click the image for the higher resolution)
EDX
The system identify the element by the energy of the electron irradiated on the specimen. 4 pictures showing the element distribution are obtained by TEM (the area in the red box is the analyzed region).
The system is also capable of the analysis of the structure on the specific spot.
(Click the image for the higher resolution)