

| GigaModule-1,2 | GigaModule-2E | GigaModule-4 | |
|---|---|---|---|
| Structure | Build-up + Core | Coreless | |
| Stacked via | |||
| Material Property (Build-up) |
CTE ≦ 70ppm | CTE ≦ 50ppm Dielectric loss tangent ≦ 0.015 |
|
| Example (Feature) |
High Pin Count BGA | for Large Chip for Low-k Chip |
for Large Chip for Low-k Chip Low inductance |
| [micron] |
| GigaModule-1,2 | GigaModule-4 | ||
|---|---|---|---|
| Total Thickness | 600~1300 | 220~520 | |
| Layer Construction | 4~14 | 4~10 | |
| Core Layer (MIC) |
Core Thickness | 400~800 | - |
| min Drill Diameter | φ150 ( φ100 ) | - | |
| min Line/Space |
40 / 40 | - | |
| VIA on Pad | Usable | - | |
| Build-up Layer (MIC) |
Dielectric Thickness | 30 or 35 | |
| min Laser Via Diameter |
φ60 ( φ40 ) | ||
| min Line/Space |
20 / 20 ( 15 / 15 ) | ||
| Stacked VIA | Usable | ||
| ( ) : developing products |
| GigaModule-2 |
|---|
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| Narrow pitch VIA for core |
| GigaModule-4 |
|---|
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| Narrow pitch VIA with full stacked structure |
Sales
Tel: +1-408-745-4966
Fax: +1-408-745-4971